| PART |
Description |
Maker |
| RJP4301APP RJP4301APP-00-T2 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4009ANS RJP4009ANS-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP5001APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4003ANS-00-Q1 RJP4003ANS |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4002ANS RJP4002ANS-00-Q1 |
400 V, N-CHANNEL IGBT 3 X 4.40, 0.65 MM HEIGHT, ULTRA SMALL, PLASTIC, VSON-8
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CY20AAJ-8F |
GTS03024-2s-025 N沟道IGBT的的频闪闪光
Nch IGBT for STROBE FLASHER
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Powerex, Inc.
Powerex Power Semiconductors
Cypress Semiconductor
Mitsubishi Electric Corporation
|
| CT40KM-8H05 |
Nch IGBT for Strobe Flasher
|
Renesas Electronics Corporation
|
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| GT8G136 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT5G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT20G101SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT20G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
